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JANTXVR2N7471T1
Infineon Technologies AG
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 45 A | 14 mΩ | 493 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 180 A | SILICON | TO-254AA | S-XSFM-P3 | Qualified | MIL-19500; RH - 100K Rad(Si) | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | SQUARE | FLANGE MOUNT | PIN/PEG | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | ||||||||||||||||||
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JANSH2N7470T1
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 45 A | 6.6 mΩ | 824 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 208 W | 180 A | SWITCHING | SILICON | TO-254AA | S-CSFM-P3 | e0 | Not Qualified | MIL-19500 | 150 °C | ISOLATED | CERAMIC, METAL-SEALED COFIRED | SQUARE | FLANGE MOUNT | TIN LEAD | PIN/PEG | SINGLE | INTERNATIONAL RECTIFIER CORP | compliant | 3A001.A.1.A | TO-254AA | FLANGE MOUNT, S-CSFM-P3 | 3 | ||||||||||
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JANTXVR2N7476T1
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | NO | SINGLE | 1 | 45 A | METAL-OXIDE SEMICONDUCTOR | 200 W | e0 | Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | Tin/Lead (Sn/Pb) | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | |||||||||||||||||||||||||||||
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JANSH2N7479U3
Infineon Technologies AG
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 22 A | 20 mΩ | 155 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 88 A | SWITCHING | SILICON | R-CBCC-N3 | e0 | Qualified | MIL-19500/703 | DRAIN | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | TIN LEAD | NO LEAD | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | 3A001.A.1.A | CHIP CARRIER, R-CBCC-N3 | ||||||||||||||||
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JANSR2N7474U2
International Rectifier
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Check for Price | No | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 250 V | 1 | 45 A | 60 mΩ | 222 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 W | 180 A | SWITCHING | SILICON | R-CBCC-N3 | e0 | Not Qualified | MIL-19500/684 | 150 °C | DRAIN | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | TIN LEAD | NO LEAD | BOTTOM | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | CHIP CARRIER, R-CBCC-N3 | 3 | ||||||||||||
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JANTXVR2N7474U2
International Rectifier
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Check for Price | Transferred | N-CHANNEL | YES | SINGLE | 1 | 45 A | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 W | 150 °C | INTERNATIONAL RECTIFIER CORP | unknown | EAR99 | , | |||||||||||||||||||||||||||||||||
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JANTXVR2N7477T1
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | NO | SINGLE | 3 | 250 V | 1 | 40.5 A | 61 mΩ | 500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 162 A | SILICON | TO-254AA | S-XSFM-P3 | e0 | Qualified | MIL-19500/685 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | UNSPECIFIED | SQUARE | FLANGE MOUNT | Tin/Lead (Sn/Pb) | PIN/PEG | SINGLE | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | TO-254AA, 3 PIN | ||||||||||||
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JANSR2N7472U2AA
Infineon Technologies AG
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 130 V | 1 | 75 A | 13.5 mΩ | 280 mJ | 116 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 W | 300 A | SWITCHING | SILICON | 130 ns | 160 ns | S-CSSO-G2 | MIL-19500; MIL-STD-750; RH - 100K Rad(Si) | 150 °C | -55 °C | DRAIN | CERAMIC, METAL-SEALED COFIRED | SQUARE | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | |||||||||||||||
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JANSR2N7478T1
International Rectifier
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 45 A | 4.5 mΩ | FAST SWITCHING | 1250 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 W | 180 A | SWITCHING | SILICON | TO-254AA | S-XSFM-P3 | e0 | Not Qualified | 150 °C | ISOLATED | UNSPECIFIED | SQUARE | FLANGE MOUNT | TIN LEAD | PIN/PEG | SINGLE | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | TO-254AA | FLANGE MOUNT, S-XSFM-P3 | 3 | |||||||||||
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JANSR2N7473U2A
Infineon Technologies AG
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 200 V | 1 | 53.5 A | 38 mΩ | 380 mJ | 65 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 250 W | 214 A | SWITCHING | SILICON | 130 ns | 160 ns | S-CSSO-G2 | MIL-19500; MIL-STD-750; RH - 100K Rad(Si) | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | CERAMIC, METAL-SEALED COFIRED | SQUARE | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | compliant | EAR99 | 2020-09-01 |