Parametric results for: 2sa1162o under Other Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

LOW NOISE 1

4 hits Apply

Collector Current-Max (IC) (1)

150 mA 2

4 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 1

4 hits Apply

Configuration (1)

SINGLE 2

4 hits Apply

DC Current Gain-Min (hFE) (1)

70.0 2

4 hits Apply

R-PDSO-G3 1

4 hits Apply

Manufacturer (3)

Galaxy Semi-Conductor Co Ltd 1 Jiangsu Changjiang Electronics Technology Co Ltd 2 Transys Electronics Limited 1

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (1)

3 1

4 hits Apply

150.0 °C 1

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

SMALL OUTLINE 1

4 hits Apply

Active 1 Contact Manufacturer 3

4 hits Apply

Polarity/Channel Type (1)

PNP 2

4 hits Apply

150 mW 1

4 hits Apply

Surface Mount (1)

YES 2

4 hits Apply

Transition Frequency-Nom (fT) (1)

80 MHz 2

4 hits Apply