Parametric results for: 2sa1810 under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

200 mA 6

6 hits Apply

Collector-Emitter Voltage-Max (1)

200 V 6

6 hits Apply

Configuration (1)

SINGLE 6

6 hits Apply

DC Current Gain-Min (hFE) (2)

60.0 4 100.0 2

Min - Max

6 hits Apply

R-PSIP-T3 6

6 hits Apply

Manufacturer (2)

Hitachi Ltd 3 Renesas Electronics Corporation 3

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

150.0 °C 3

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

IN-LINE 6

6 hits Apply

Obsolete 1 Transferred 5

6 hits Apply

Polarity/Channel Type (1)

PNP 6

6 hits Apply

10 W 3

6 hits Apply

Surface Mount (1)

NO 6

6 hits Apply

Transition Frequency-Nom (fT) (1)

300 MHz 6

6 hits Apply