Parametric results for: 2sk112 under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOW NOISE 1

12 hits Apply

DRAIN 10 GATE 1

12 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 9

12 hits Apply

DS Breakdown Voltage-Min (3)

60 V 5 100 V 3 1 kV 2

Min (V) - Max (V)

12 hits Apply

Drain Current-Max (ID) (3)

8 A 2 40 A 7 45 A 1

Min (A) - Max (A)

12 hits Apply

Drain-source On Resistance-Max (5)

30 mΩ 1 50 mΩ 2 70 mΩ 3 95 mΩ 2 1.8 Ω 2

Min (Ω) - Max (Ω)

12 hits Apply

JUNCTION 2 METAL-OXIDE SEMICONDUCTOR 10

12 hits Apply

TO-18 1

12 hits Apply

O-MBCY-W3 1 R-PSFM-T3 10

12 hits Apply

e0 5 e6 1

12 hits Apply

Manufacturer (4)

InterFET Corporation 1 NEC Electronics Group 4 Renesas Electronics Corporation 3 Toshiba America Electronic Components 4

12 hits Apply

Number of Elements (1)

1 11

12 hits Apply

Number of Terminals (1)

3 11

12 hits Apply

DEPLETION MODE 1 ENHANCEMENT MODE 10

12 hits Apply

150.0 °C 5

12 hits Apply

METAL 1 PLASTIC/EPOXY 10

12 hits Apply

RECTANGULAR 10 ROUND 1

12 hits Apply

CYLINDRICAL 1 FLANGE MOUNT 10

12 hits Apply

Active 1 Contact Manufacturer 1 End Of Life 1 Obsolete 7 Transferred 2

12 hits Apply

Yes 3

12 hits Apply

260 2 NOT SPECIFIED 3

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

125 W 1

12 hits Apply

250 mW 1 100 W 3 150 W 1

Min (W) - Max (W)

12 hits Apply

Surface Mount (1)

NO 12

12 hits Apply