Parametric results for: 2sk1152s under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 5

15 hits Apply

Configuration (2)

SINGLE 10 SINGLE WITH BUILT-IN DIODE 5

15 hits Apply

DS Breakdown Voltage-Min (1)

500 V 9

15 hits Apply

Drain Current-Max (ID) (1)

1.5 A 15

15 hits Apply

Drain-source On Resistance-Max (1)

6 Ω 9

15 hits Apply

METAL-OXIDE SEMICONDUCTOR 15

15 hits Apply

R-PSSO-G2 9

15 hits Apply

e6 3

15 hits Apply

Manufacturer (2)

Hitachi Ltd 6 Renesas Electronics Corporation 9

15 hits Apply

1 4

15 hits Apply

Number of Elements (1)

1 15

15 hits Apply

Number of Terminals (1)

2 9

15 hits Apply

ENHANCEMENT MODE 15

15 hits Apply

150.0 °C 9

15 hits Apply

PLASTIC/EPOXY 9

15 hits Apply

RECTANGULAR 9

15 hits Apply

SMALL OUTLINE 9

15 hits Apply

Not Recommended 2 Obsolete 7 Transferred 6

15 hits Apply

Yes 3

15 hits Apply

245 3 NOT SPECIFIED 1

15 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 15

15 hits Apply

20 W 9

15 hits Apply

Surface Mount (1)

YES 15

15 hits Apply