Parametric results for: 2sk14 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

AVALANCHE RATED 2 FAST SWITCHING 1 GATE PROTECTED 3 HIGH RELIABILITY 3 LOW NOISE 3

484 hits Apply

2.0 mJ 1 57.0 mJ 8 206.0 mJ 8 560.0 mJ 2 907.0 mJ 1 1250.0 mJ 3 2500.0 mJ 4

Min (mJ) - Max (mJ)

484 hits Apply

DRAIN 78 GATE 4 ISOLATED 128 SOURCE 1

484 hits Apply

Configuration (3)

SEPARATE, 2 ELEMENTS 1 SINGLE 342 SINGLE WITH BUILT-IN DIODE 134

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DS Breakdown Voltage-Min (14)

4 V 1 30 V 28 60 V 77 100 V 85 250 V 8 300 V 6 350 V 5 450 V 93 500 V 11 600 V 7 650 V 4 900 V 63 1 kV 1 1.5 kV 10

Min (V) - Max (V)

484 hits Apply

Drain Current-Max (ID) (36)

1 mA 1 5 mA 3 10 mA 24 60 mA 1 100 mA 4 200 mA 17 300 mA 6 500 mA 3 1 A 13 1.5 A 4 2 A 32 2.5 A 5 3 A 23 3.5 A 6 4 A 30 4.5 A 7 5 A 24 6 A 1 7 A 17 8 A 64 9 A 3 10 A 20 12 A 15 15 A 25 16 A 9 20 A 17 25 A 21 30 A 21 32 A 1 35 A 4 40 A 18 50 A 13 60 A 13 70 A 2 80 A 6 100 A 2

Min (A) - Max (A)

484 hits Apply

Drain-source On Resistance-Max (49)

12 mΩ 2 16 mΩ 13 26 mΩ 26 35 mΩ 13 45 mΩ 11 55 mΩ 27 75 mΩ 3 80 mΩ 14 91 mΩ 2 95 mΩ 1 100 mΩ 13 110 mΩ 3 120 mΩ 5 150 mΩ 4 160 mΩ 16 170 mΩ 5 200 mΩ 3 220 mΩ 3 250 mΩ 1 270 mΩ 3 300 mΩ 16 350 mΩ 4 400 mΩ 8 450 mΩ 4 500 mΩ 3 550 mΩ 3 600 mΩ 23 700 mΩ 4 800 mΩ 34 900 mΩ 4 950 mΩ 3 1 Ω 7 1.2 Ω 8 1.3 Ω 2 1.4 Ω 12 1.5 Ω 2 1.6 Ω 15 2.4 Ω 3 2.6 Ω 11 2.8 Ω 4 3 Ω 4 3.5 Ω 1 3.6 Ω 21 4.5 Ω 2 6 Ω 10 11 Ω 7 12 Ω 6 70 Ω 15 200 Ω 2

Min (Ω) - Max (Ω)

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HIGH ELECTRON MOBILITY 1 JUNCTION 32 METAL-OXIDE SEMICONDUCTOR 447

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15 pF 2 35 pF 2

Min (pF) - Max (pF)

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Highest Frequency Band (1)

X BAND 1

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TO-18 1 TO-218 46 TO-220AB 161 TO-243 6 TO-247 5 TO-251 14 TO-71 1

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O-CRDB-F4 1 O-MBCY-W3 1 O-MBCY-W6 1 O-PBCY-T3 5 R-PDSO-G3 27 R-PSFM-T3 330 R-PSIP-T3 31 R-PSSO-F3 25 R-PSSO-G2 15

484 hits Apply

e0 28 e1 2 e2 6 e6 5

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Manufacturer (10)

Hitachi Ltd 25 InterFET Corporation 2 NEC Electronics Group 27 onsemi 17 Panasonic Electronic Components 3 Renesas Electronics Corporation 70 ROHM Semiconductor 1 SANYO Electric Co Ltd 323 SANYO Semiconductor Co Ltd 8 Toshiba America Electronic Components 8

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1 11

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Number of Elements (2)

1 476 2 1

Min - Max

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Number of Terminals (4)

2 15 3 419 4 1 6 1

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DEPLETION MODE 288 ENHANCEMENT MODE 177

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125.0 °C 2 150.0 °C 150 155.0 °C 2

Min (°C) - Max (°C)

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CERAMIC, METAL-SEALED COFIRED 1 METAL 2 PLASTIC/EPOXY 433

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RECTANGULAR 428 ROUND 8

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CYLINDRICAL 7 DISK BUTTON 1 FLANGE MOUNT 330 IN-LINE 31 SMALL OUTLINE 67

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Active 8 Contact Manufacturer 2 End Of Life 1 Not Recommended 1 Obsolete 419 Transferred 53

484 hits Apply

No 9 Yes 18

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240 1 260 6 NOT SPECIFIED 16

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Polarity/Channel Type (1)

N-CHANNEL 480

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3.5 W 9 20 W 21 25 W 12 30 W 29 35 W 2 40 W 26 50 W 13 60 W 59 70 W 37 80 W 21 100 W 18 120 W 12 125 W 2 150 W 24 200 W 8 250 W 4

Min (W) - Max (W)

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100 mW 1 600 mW 1 750 mW 3 1 W 6 1.2 W 1 1.75 W 13 2 W 42 2.5 W 9 3 W 11 3.5 W 9 20 W 8 25 W 1 30 W 7 35 W 4 40 W 4 50 W 12 60 W 4 70 W 4 100 W 11 120 W 3 140 W 2 160 W 1 200 W 3

Min (W) - Max (W)

484 hits Apply

Power Gain-Min (Gp) (1)

9.0 dB 1

484 hits Apply

Surface Mount (2)

NO 390 YES 90

484 hits Apply