Parametric results for: 2sk152 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 14 ISOLATED 10

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Configuration (2)

SINGLE 29 SINGLE WITH BUILT-IN DIODE 19

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DS Breakdown Voltage-Min (4)

180 V 5 450 V 3 500 V 11 900 V 13

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (1)

10 A 2

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Drain Current-Max (ID) (8)

50 mA 4 4 A 17 10 A 7 15 A 2 20 A 2 30 A 3 40 A 6 50 A 6

Min (A) - Max (A)

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Drain-source On Resistance-Max (8)

100 mΩ 3 110 mΩ 3 150 mΩ 3 160 mΩ 6 350 mΩ 2 450 mΩ 2 700 mΩ 2 4 Ω 13

Min (Ω) - Max (Ω)

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JUNCTION 6 METAL-OXIDE SEMICONDUCTOR 43

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Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 4

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TO-18 1

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O-MBCY-W3 1 O-PBCY-T3 4 R-PSFM-T3 26 R-PSIP-T3 4 R-PSSO-G2 9

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e0 13 e2 5 e6 4

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Manufacturer (6)

Hitachi Ltd 11 InterFET Corporation 1 Renesas Electronics Corporation 25 Shindengen Electronic Manufacturing Co Ltd 6 Sony Semiconductor 5 Toshiba America Electronic Components 5

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1 10 2 3

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Number of Elements (1)

1 48

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Number of Terminals (2)

2 9 3 35

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DEPLETION MODE 5 ENHANCEMENT MODE 38

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100.0 °C 5 150.0 °C 32

Min (°C) - Max (°C)

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METAL 1 PLASTIC/EPOXY 43

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RECTANGULAR 39 ROUND 5

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CYLINDRICAL 5 FLANGE MOUNT 26 IN-LINE 4 SMALL OUTLINE 9

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Active 4 Contact Manufacturer 1 Not Recommended 5 Obsolete 29 Transferred 14

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No 5 Yes 12

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240 5 245 3 NOT SPECIFIED 7

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Polarity/Channel Type (1)

N-CHANNEL 49

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55 W 2 65 W 2 70 W 2

Min (W) - Max (W)

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300 mW 1 55 W 1 60 W 10 65 W 1 70 W 1 120 W 3 200 W 3 250 W 11

Min (W) - Max (W)

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Surface Mount (2)

NO 36 YES 13

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