Parametric results for: 2sk19 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

AVALANCHE RATED 11 GATE PROTECTED 18 HIGH RELIABILITY 20 HIGH VOLTAGE 10 LOGIC LEVEL COMPATIBLE 2 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 2 LOW NOISE 13

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7.2 mJ 2 15.0 mJ 1 16.2 mJ 2 44.3 mJ 2 73.8 mJ 6 78.0 mJ 2 170.8 mJ 4 243.0 mJ 4

Min (mJ) - Max (mJ)

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DRAIN 89 ISOLATED 55

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Configuration (4)

SEPARATE, 2 ELEMENTS 5 SINGLE 274 Single 8 SINGLE WITH BUILT-IN DIODE 133

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DS Breakdown Voltage-Min (15)

3.5 V 3 16 V 15 18 V 45 30 V 4 60 V 48 100 V 66 180 V 9 200 V 9 250 V 25 450 V 12 500 V 12 600 V 35 800 V 1 900 V 19 1 kV 10

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (3)

3 A 2 5 A 4 25 A 2

Min (A) - Max (A)

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Drain Current-Max (ID) (29)

10 mA 14 20 mA 59 50 mA 5 100 mA 16 200 mA 11 500 mA 1 2 A 19 2.5 A 6 3 A 21 4 A 47 4.5 A 4 5 A 28 6 A 13 7 A 3 8 A 10 10 A 17 12 A 25 15 A 15 16 A 1 18 A 3 20 A 6 25 A 28 27 A 5 30 A 8 35 A 3 36 A 1 40 A 16 45 A 3 50 A 8

Min (A) - Max (A)

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Drain-source On Resistance-Max (49)

27 mΩ 1 28 mΩ 14 35 mΩ 1 40 mΩ 5 55 mΩ 4 60 mΩ 22 70 mΩ 1 80 mΩ 14 85 mΩ 5 100 mΩ 2 110 mΩ 6 135 mΩ 14 160 mΩ 14 180 mΩ 5 200 mΩ 13 220 mΩ 6 230 mΩ 3 250 mΩ 6 300 mΩ 4 350 mΩ 4 400 mΩ 3 450 mΩ 4 480 mΩ 1 500 mΩ 4 550 mΩ 1 650 mΩ 19 700 mΩ 18 750 mΩ 1 760 mΩ 3 880 mΩ 3 900 mΩ 2 1 Ω 2 1.2 Ω 10 1.25 Ω 3 1.4 Ω 3 1.5 Ω 8 1.6 Ω 3 1.8 Ω 1 2.4 Ω 6 2.8 Ω 13 3 Ω 3 3.6 Ω 1 3.8 Ω 7 4 Ω 5 4.3 Ω 6 5 Ω 2 7 Ω 1 7.5 Ω 2 15 Ω 7

Min (Ω) - Max (Ω)

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HIGH ELECTRON MOBILITY 3 JUNCTION 66 METAL-OXIDE SEMICONDUCTOR 311

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0.25 pF 13 0.65 pF 11 50 pF 2

Min (pF) - Max (pF)

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Highest Frequency Band (2)

VERY HIGH FREQUENCY BAND 27 X BAND 3

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TO-218 5 TO-220AB 76 TO-236 4 TO-247 2 TO-251 4 TO-251AA 2 TO-252AA 2 TO-92 12

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E-PBCY-W6 5 O-CRDB-F4 3 O-PBCY-T3 13 O-PBCY-W3 14 R-CDFM-F4 2 R-PDSO-G3 66 R-PSFM-T3 141 R-PSIP-T2 1 R-PSIP-T3 70 R-PSSO-F3 8 R-PSSO-G2 78

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e0 51 e2 7 e6 8

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Manufacturer (17)

Fuji Electric Co Ltd 28 Hitachi Ltd 71 Micro Electronics Corporation 4 National Semiconductor Corporation 1 NEC Compound Semiconductor Devices Ltd 2 NEC Electronics America Inc 19 NEC Electronics Group 22 onsemi 2 Panasonic Electronic Components 14 Renesas Electronics Corporation 110 ROHM Semiconductor 9 SANYO Electric Co Ltd 106 SANYO Semiconductor Co Ltd 10 Semiconductors Inc 3 Shindengen Electronic Manufacturing Co Ltd 7 Texas Instruments 1 Toshiba America Electronic Components 35

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1 24 2 1

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Number of Elements (2)

1 407 2 5

Min - Max

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Number of Terminals (4)

2 79 3 312 4 5 6 5

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DEPLETION MODE 126 ENHANCEMENT MODE 221

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125.0 °C 40 150.0 °C 126

Min (°C) - Max (°C)

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CERAMIC, METAL-SEALED COFIRED 5 PLASTIC/EPOXY 396

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ELLIPTICAL 5 RECTANGULAR 366 ROUND 30

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CYLINDRICAL 32 DISK BUTTON 3 FLANGE MOUNT 143 IN-LINE 71 SMALL OUTLINE 152

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Active 6 Contact Manufacturer 6 End Of Life 2 Not Recommended 5 Obsolete 309 Transferred 116

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No 15 Yes 21

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240 1 245 3 260 9 NOT SPECIFIED 19

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Polarity/Channel Type (1)

N-CHANNEL 423

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1 W 2 20 W 6 25 W 10 30 W 10 40 W 3 45 W 2 50 W 25 60 W 18 70 W 18 80 W 3 100 W 15 120 W 6 125 W 3

Min (W) - Max (W)

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100 mW 1 150 mW 13 200 mW 9 500 mW 4 800 mW 6 1 W 4 1.65 W 6 1.75 W 4 2 W 11 2.5 W 1 10 W 7 20 W 16 25 W 2 30 W 12 35 W 5 50 W 12 60 W 3 70 W 3 75 W 2 80 W 10 100 W 6 125 W 1 150 W 6 200 W 9

Min (W) - Max (W)

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Power Gain-Min (Gp) (2)

12.0 dB 3 13.0 dB 8

Min (dB) - Max (dB)

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Surface Mount (2)

NO 256 YES 177

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