Parametric results for: 2sk2136 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE ENERGY RATED 5

6 hits Apply

80.0 mJ 5

6 hits Apply

DRAIN 5

6 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

200 V 5

6 hits Apply

Drain Current-Max (ID) (1)

20 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

180 mΩ 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-220AB 4

6 hits Apply

R-PSFM-T3 4 R-PSSO-G2 1

6 hits Apply

e0 2

6 hits Apply

Manufacturer (2)

NEC Electronics Group 3 Renesas Electronics Corporation 3

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (2)

2 1 3 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 3

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

FLANGE MOUNT 4 SMALL OUTLINE 1

6 hits Apply

Obsolete 4 Transferred 2

6 hits Apply

Yes 1

6 hits Apply

260 1 NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

75 W 3

6 hits Apply

Surface Mount (2)

NO 4 YES 2

6 hits Apply