Parametric results for: 2sk26 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

AVALANCHE RATED 35 HIGH VOLTAGE 1 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 3 LOW NOISE 5

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10.0 mJ 1 48.0 mJ 5 49.0 mJ 3 71.9 mJ 2 77.6 mJ 1 86.2 mJ 1 87.0 mJ 1 88.0 mJ 1 88.7 mJ 1 98.0 mJ 3 100.0 mJ 5 109.0 mJ 1 138.0 mJ 1 141.0 mJ 2 150.5 mJ 1 160.0 mJ 2 180.0 mJ 2 200.0 mJ 1 222.8 mJ 1 223.0 mJ 1 229.0 mJ 1 241.0 mJ 2 254.0 mJ 1 255.0 mJ 1 260.0 mJ 2 270.0 mJ 1 277.0 mJ 1 295.0 mJ 1 300.0 mJ 1 345.0 mJ 1 370.0 mJ 2 518.5 mJ 1 520.0 mJ 1 595.0 mJ 1 605.0 mJ 1 630.0 mJ 1 663.0 mJ 1 778.0 mJ 2 883.0 mJ 1 910.0 mJ 1

Min (mJ) - Max (mJ)

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DRAIN 74 ISOLATED 48 SOURCE 5

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Configuration (2)

SINGLE 122 SINGLE WITH BUILT-IN DIODE 102

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DS Breakdown Voltage-Min (15)

6 V 6 20 V 1 30 V 16 50 V 4 60 V 7 200 V 1 250 V 7 400 V 1 450 V 2 500 V 23 600 V 27 700 V 2 800 V 20 900 V 71 1 kV 1

Min (V) - Max (V)

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Drain Current-Max (ID) (27)

20 mA 7 1 A 9 1.5 A 7 2 A 8 2.5 A 2 3 A 29 3.5 A 6 4 A 7 5 A 39 5.5 A 4 6 A 12 6.5 A 1 7 A 16 8 A 9 9 A 8 10 A 18 12 A 6 13 A 3 14 A 2 15 A 5 16 A 2 18 A 1 20 A 7 30 A 12 50 A 4 70 A 1 80 A 1

Min (A) - Max (A)

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Drain-source On Resistance-Max (40)

17 mΩ 6 40 mΩ 1 46 mΩ 4 50 mΩ 12 70 mΩ 1 180 mΩ 2 270 mΩ 2 390 mΩ 1 400 mΩ 1 440 mΩ 4 450 mΩ 1 520 mΩ 1 550 mΩ 2 600 mΩ 1 650 mΩ 3 800 mΩ 4 900 mΩ 2 1 Ω 2 1.1 Ω 5 1.2 Ω 6 1.25 Ω 5 1.4 Ω 9 1.5 Ω 4 1.6 Ω 3 1.7 Ω 1 1.8 Ω 1 1.85 Ω 2 2 Ω 15 2.2 Ω 2 2.5 Ω 4 2.6 Ω 6 2.8 Ω 21 3.6 Ω 3 4 Ω 6 4.3 Ω 1 4.7 Ω 21 4.8 Ω 2 5.5 Ω 7 10 Ω 4 14 Ω 5

Min (Ω) - Max (Ω)

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HIGH ELECTRON MOBILITY 5 JUNCTION 1 METAL-OXIDE SEMICONDUCTOR 219

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Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 6

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TO-220AB 47 TO-228AA 1 TO-247 6

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R-PDSO-G3 1 R-PDSO-G4 5 R-PDSO-G8 1 R-PSFM-T3 124 R-PSIP-T3 17 R-PSSO-F3 4 R-PSSO-G2 33 R-PSSO-G3 1 R-PSSO-X2 1 S-PSSO-G2 2

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e0 24 e6 3

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Manufacturer (9)

Fuji Electric Co Ltd 30 Hitachi Ltd 11 onsemi 8 Panasonic Electronic Components 2 Renesas Electronics Corporation 10 SANYO Electric Co Ltd 56 SANYO Semiconductor Co Ltd 3 Shindengen Electronic Manufacturing Co Ltd 63 Toshiba America Electronic Components 52

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1 3 2 15

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Number of Elements (1)

1 224

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Number of Terminals (4)

2 36 3 147 4 5 8 1

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DEPLETION MODE 6 ENHANCEMENT MODE 218

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125.0 °C 2 150.0 °C 112

Min (°C) - Max (°C)

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PLASTIC/EPOXY 189

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RECTANGULAR 187 SQUARE 2

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FLANGE MOUNT 124 IN-LINE 17 SMALL OUTLINE 48

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Active 39 End Of Life 11 Obsolete 171 Transferred 14

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No 14 Yes 3

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240 18 245 2 NOT SPECIFIED 14

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Polarity/Channel Type (2)

N-CHANNEL 226 P-CHANNEL 1

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100 mW 2 1.5 W 1 10 W 1 30 W 1 35 W 2 40 W 3 45 W 1 50 W 3 55 W 1 60 W 3 65 W 2 75 W 1 80 W 1 100 W 4 120 W 1 125 W 2 150 W 2

Min (W) - Max (W)

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100 mW 1 1.5 W 3 2 W 1 8 W 1 10 W 2 15 W 1 20 W 1 24 W 1 25 W 8 28 W 2 30 W 9 35 W 15 40 W 11 45 W 1 48 W 1 50 W 17 55 W 1 60 W 4 65 W 2 70 W 3 75 W 1 80 W 3 85 W 3 100 W 9 120 W 3 125 W 15 150 W 12

Min (W) - Max (W)

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Power Gain-Min (Gp) (1)

16.0 dB 5

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Surface Mount (2)

NO 177 YES 49

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