Parametric results for: 2sk3074 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 1

3 hits Apply

Configuration (1)

SINGLE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

30 V 1

3 hits Apply

Drain Current-Max (ID) (1)

1 A 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

3 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

3 hits Apply

R-PSSO-F3 1

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Number of Elements (1)

1 1

3 hits Apply

Number of Terminals (1)

3 1

3 hits Apply

ENHANCEMENT MODE 1

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

SMALL OUTLINE 1

3 hits Apply

End Of Life 3

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

3 hits Apply

Surface Mount (1)

YES 1

3 hits Apply