Parametric results for: 2sk3205 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

71.0 mJ 3

6 hits Apply

DRAIN 3

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 3

6 hits Apply

DS Breakdown Voltage-Min (1)

150 V 3

6 hits Apply

Drain Current-Max (ID) (1)

5 A 5

6 hits Apply

Drain-source On Resistance-Max (1)

750 mΩ 3

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

R-PSIP-T3 1 R-PSSO-G2 2

6 hits Apply

e0 2

6 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 6

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (2)

2 2 3 1

6 hits Apply

ENHANCEMENT MODE 5

6 hits Apply

150.0 °C 1

6 hits Apply

PLASTIC/EPOXY 3

6 hits Apply

RECTANGULAR 3

6 hits Apply

IN-LINE 1 SMALL OUTLINE 2

6 hits Apply

End Of Life 4 Obsolete 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

6 hits Apply

20 W 2

6 hits Apply

Surface Mount (2)

NO 2 YES 3

6 hits Apply