Parametric results for: 2sk3510 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

450.0 mJ 16

23 hits Apply

DRAIN 16

23 hits Apply

Configuration (2)

SINGLE 5 SINGLE WITH BUILT-IN DIODE 16

23 hits Apply

DS Breakdown Voltage-Min (1)

75 V 16

23 hits Apply

Drain Current-Max (ID) (1)

83 A 21

23 hits Apply

Drain-source On Resistance-Max (1)

8.5 mΩ 16

23 hits Apply

METAL-OXIDE SEMICONDUCTOR 21

23 hits Apply

TO-220AB 4 TO-262AA 4 TO-263AB 4

23 hits Apply

R-PSFM-T3 4 R-PSIP-T3 4 R-PSSO-G2 8

23 hits Apply

e0 6

23 hits Apply

Manufacturer (2)

NEC Electronics Group 8 Renesas Electronics Corporation 15

23 hits Apply

Number of Elements (1)

1 21

23 hits Apply

Number of Terminals (2)

2 8 3 8

23 hits Apply

ENHANCEMENT MODE 18

23 hits Apply

150.0 °C 11

23 hits Apply

PLASTIC/EPOXY 16

23 hits Apply

RECTANGULAR 16

23 hits Apply

FLANGE MOUNT 4 IN-LINE 4 SMALL OUTLINE 8

23 hits Apply

Obsolete 19 Transferred 4

23 hits Apply

Yes 5

23 hits Apply

260 2 NOT SPECIFIED 9

23 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 21

23 hits Apply

125 W 11

23 hits Apply

Surface Mount (2)

NO 9 YES 12

23 hits Apply