Parametric results for: 2sk39 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW NOISE 5

230 hits Apply

40.0 mJ 2 68.0 mJ 2 129.0 mJ 2 141.0 mJ 2 185.0 mJ 2 211.0 mJ 1 227.9 mJ 5 237.3 mJ 5 301.1 mJ 5 320.0 mJ 2 345.0 mJ 1 349.1 mJ 5 439.1 mJ 5 444.0 mJ 1 453.9 mJ 5 487.0 mJ 1 552.0 mJ 1 665.7 mJ 5 719.1 mJ 5 759.0 mJ 1 792.0 mJ 2 801.0 mJ 1 806.0 mJ 1 816.0 mJ 1 820.0 mJ 1 918.0 mJ 1 1080.0 mJ 1

Min (mJ) - Max (mJ)

230 hits Apply

DRAIN 96 ISOLATED 12

230 hits Apply

Configuration (2)

SINGLE 72 SINGLE WITH BUILT-IN DIODE 134

230 hits Apply

DS Breakdown Voltage-Min (14)

20 V 10 25 V 39 30 V 3 40 V 2 60 V 12 75 V 1 100 V 6 120 V 5 200 V 13 250 V 11 450 V 5 500 V 14 600 V 16 900 V 5

Min (V) - Max (V)

230 hits Apply

Drain Current-Max (ID) (31)

330 µA 3 470 µA 5 6 mA 4 10 mA 1 100 mA 5 900 mA 3 1 A 2 2 A 3 2.6 A 5 3 A 5 3.6 A 5 4 A 8 4.3 A 1 6 A 9 10 A 14 11 A 10 14 A 6 15 A 1 17 A 3 18 A 4 19 A 2 20 A 4 23 A 2 30 A 22 34 A 5 48 A 10 60 A 6 64 A 40 67 A 5 70 A 3 82 A 10

Min (A) - Max (A)

230 hits Apply

Drain-source On Resistance-Max (39)

3.8 mΩ 4 4.8 mΩ 12 5.6 mΩ 10 7 mΩ 1 7.5 mΩ 4 10 mΩ 2 16.5 mΩ 2 26 mΩ 2 30 mΩ 4 30.2 mΩ 11 52 mΩ 1 85 mΩ 2 92 mΩ 2 105 mΩ 1 110 mΩ 5 120 mΩ 4 230 mΩ 1 250 mΩ 2 260 mΩ 1 280 mΩ 5 300 mΩ 1 310 mΩ 1 320 mΩ 1 330 mΩ 1 440 mΩ 1 450 mΩ 8 480 mΩ 2 640 mΩ 4 700 mΩ 5 800 mΩ 5 830 mΩ 2 1.2 Ω 2 1.4 Ω 1 1.6 Ω 1 2.3 Ω 5 3.3 Ω 5 6 Ω 2 6.4 Ω 5 12 Ω 5

Min (Ω) - Max (Ω)

230 hits Apply

JUNCTION 9 METAL-OXIDE SEMICONDUCTOR 197

230 hits Apply

TO-126 2 TO-220AB 19 TO-251AA 12 TO-251AB 2 TO-252AA 25 TO-252AB 2 TO-263AB 8

230 hits Apply

R-PDSO-F3 12 R-PDSO-F4 1 R-PDSO-G3 1 R-PSFM-T3 32 R-PSIP-T3 31 R-PSSO-F3 4 R-PSSO-G2 59 R-PSSO-G3 2 R-XBCC-N3 1

230 hits Apply

e0 32 e6 16

230 hits Apply

Manufacturer (10)

Fuji Electric Co Ltd 46 Hitachi Ltd 2 NEC Electronics America Inc 13 NEC Electronics Group 14 onsemi 9 Panasonic Electronic Components 14 Renesas Electronics Corporation 82 SANYO Electric Co Ltd 16 SANYO Semiconductor Co Ltd 11 Toshiba America Electronic Components 23

230 hits Apply

1 12

230 hits Apply

Number of Elements (1)

1 206

230 hits Apply

Number of Terminals (3)

2 59 3 83 4 1

230 hits Apply

DEPLETION MODE 12 ENHANCEMENT MODE 177

230 hits Apply

150.0 °C 111 175.0 °C 3

Min (°C) - Max (°C)

230 hits Apply

PLASTIC/EPOXY 142 UNSPECIFIED 1

230 hits Apply

RECTANGULAR 143

230 hits Apply

CHIP CARRIER 1 FLANGE MOUNT 32 IN-LINE 31 SMALL OUTLINE 79

230 hits Apply

Active 35 End Of Life 12 Not Recommended 11 Obsolete 145 Transferred 27

230 hits Apply

No 3 Yes 40

230 hits Apply

260 16 NOT SPECIFIED 36

230 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 206

230 hits Apply

200 mW 1 3.5 W 4 10 W 2 20 W 12 21 W 9 29 W 6 30 W 2 32 W 1 36 W 10 38 W 8 40 W 7 45 W 6 50 W 2 60 W 7 64 W 5 90 W 3 100 W 3 104 W 7 150 W 12 165 W 2 195 W 1 270 W 4

Min (W) - Max (W)

230 hits Apply

Surface Mount (2)

NO 82 YES 124

230 hits Apply