Parametric results for: 2sk654 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 3

4 hits Apply

DRAIN 3

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

4 hits Apply

Drain Current-Max (ID) (1)

1 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

3 Ω 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSSO-G2 3

4 hits Apply

e0 1

4 hits Apply

Manufacturer (2)

NEC Electronics America Inc 3 Renesas Electronics Corporation 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Obsolete 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

10 W 3

4 hits Apply

10 W 1

4 hits Apply

Surface Mount (2)

NO 1 YES 3

4 hits Apply