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EPCQ16ASI8N
Intel Corporation
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$11.9258 | Yes | Active | 16.7772 Mbit | 1 | 16MX1 | 3.3 V | 100 MHz | FLASH | 20 | 100000 Write/Erase Cycles | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | SERIAL | 3.3 V | 50 µA | 15 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | R-PDSO-G8 | e3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 8 | PLASTIC/EPOXY | SOP | RECTANGULAR | SMALL OUTLINE | YES | Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | INTEL CORP | SOIC-8 | compliant | 3A991 | 8542.32.00.51 | Intel | |||||||||||||||||||||
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EPC2TC32N
Intel Corporation
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$28.8800 | Yes | Obsolete | 1.6957 Mbit | 1 | 1695680X1 | 3.3 V | CONFIGURATION MEMORY | IT ALSO REQUIRES 5V NOMINAL SUPPLY | 1 | 1695680 | 1.6957 M | SYNCHRONOUS | 3-STATE | SERIAL | 3.3 V | 100 µA | 50 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PQFP-G32 | Not Qualified | e3 | 3 | 70 °C | 260 | 30 | 32 | PLASTIC/EPOXY | TQFP | TQFP32,.35SQ,32 | SQUARE | FLATPACK, THIN PROFILE | YES | MATTE TIN | GULL WING | 800 µm | QUAD | 1.2 mm | 7 mm | 7 mm | INTEL CORP | TQFP-32 | compliant | EAR99 | 8542.32.00.61 | Intel | |||||||||||||||||||||
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EPC2LC20N
Intel Corporation
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$37.7553 | Yes | Obsolete | 1.6957 Mbit | 1 | 1695680X1 | 3.3 V | CONFIGURATION MEMORY | IT ALSO REQUIRES 5V NOMINAL SUPPLY | 1 | 1695680 | 1.6957 M | SYNCHRONOUS | 3-STATE | SERIAL | 3.3 V | 100 µA | 50 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | S-PQCC-J20 | Not Qualified | e3 | 3 | 70 °C | 245 | 30 | 20 | PLASTIC/EPOXY | QCCJ | LCC20,.39SQ | SQUARE | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 4.572 mm | 8.9662 mm | 8.9662 mm | INTEL CORP | LCC-20 | compliant | EAR99 | 8542.32.00.61 | Intel | |||||||||||||||||||||
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N28F256A-200
Intel Corporation
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Check for Price | No | No | Obsolete | 262.144 kbit | 8 | 32KX8 | 5 V | 200 ns | FLASH | YES | NO | 10000 Write/Erase Cycles | 1 | 32000 | 32.768 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | NO | NOR TYPE | R-PQCC-J32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | TIN LEAD | J BEND | 1.27 mm | QUAD | 3.55 mm | 13.97 mm | 11.43 mm | INTEL CORP | QCCJ, LDCC32,.5X.6 | unknown | EAR99 | 8542.32.00.51 | QFJ | 32 | |||||||||||||||||||
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E28F001BX-T70
Intel Corporation
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Check for Price | No | Obsolete | 1.0486 Mbit | 8 | 8K,4K,112K | 128KX8 | 5 V | 70 ns | FLASH | DEEP POWER-DOWN; TOP BOOT BLOCK | TOP | YES | NO | 100000 Write/Erase Cycles | 1 | 1,2,1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 12 V | 1 µA | 30 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | NO | NOR TYPE | R-PDSO-G32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | TSOP1 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | INTEL CORP | 8 X 20 MM, 1.20 MM HEIGHT, TSOP-32 | unknown | EAR99 | 8542.32.00.51 | TSOP | 32 | ||||||||||||||
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E28F800B5-T90
Intel Corporation
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Check for Price | No | Obsolete | 8.3886 Mbit | 8 | 16K,8K,96K,128K | 1MX8 | 5 V | 5 V | 80 ns | FLASH | CAN BE CONFG AS 512K X 16; TOP BOOT BLOCK | 8 | TOP | YES | NO | 100000 Write/Erase Cycles | 1 | 1,2,1,7 | 1000000 | 1.0486 M | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 8 µA | 70 µA | 5.5 V | 4.5 V | MOS | COMMERCIAL | NO | NOR TYPE | R-PDSO-G48 | Not Qualified | e0 | 70 °C | NOT SPECIFIED | NOT SPECIFIED | 48 | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 12 mm | INTEL CORP | TSOP1, TSSOP48,.8,20 | unknown | TSOP | 48 | ||||||||||||
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GE28F640W30TD70
Intel Corporation
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Check for Price | No | Transferred | 67.1089 Mbit | 16 | 4K,32K | 4MX16 | 1.8 V | 70 ns | FLASH | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | TOP | YES | YES | NO | 1 | 8,127 | 4000000 | 4.1943 M | ASYNCHRONOUS | 4 words | PARALLEL | 1.8 V | 5 µA | 40 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B56 | Not Qualified | e0 | 85 °C | -40 °C | 56 | PLASTIC/EPOXY | VFBGA | BGA56,7X8,30 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | TIN LEAD | BALL | 750 µm | BOTTOM | 1 mm | 9 mm | 7.7 mm | INTEL CORP | 0.75 MM PITCH, VFBGA-56 | compliant | EAR99 | 8542.32.00.51 | BGA | 56 | |||||||||||||
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RC28F800F3B95
Intel Corporation
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Check for Price | No | Obsolete | 8.3886 Mbit | 16 | 4K,32K | 512KX16 | 3 V | 95 ns | FLASH | MIN 100,000 BLOCK ERASE CYCLES; BOTTOM BOOT BLOCK | BOTTOM | YES | NO | 1 | 8,15 | 512000 | 524.288 k | SYNCHRONOUS | 4 words | PARALLEL | 2.7 V | 75 µA | 60 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | NO | NOR TYPE | R-PBGA-B64 | Not Qualified | 1 | 85 °C | -40 °C | 64 | PLASTIC/EPOXY | TBGA | BGA64,8X8,40 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | BALL | 1 mm | BOTTOM | 1.2 mm | 13 mm | 10 mm | INTEL CORP | TBGA, BGA64,8X8,40 | unknown | EAR99 | 8542.32.00.51 | BGA | 64 | |||||||||||||||
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GE28F640W18BD60A
Intel Corporation
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Check for Price | No | Obsolete | 67.1089 Mbit | 16 | 4MX16 | 1.8 V | 60 ns | FLASH | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE | BOTTOM | 1 | 4000000 | 4.1943 M | ASYNCHRONOUS | PARALLEL | 1.8 V | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NOR TYPE | R-PBGA-B56 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 56 | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1 mm | 9 mm | 7.7 mm | INTEL CORP | 9 X 7.70 MM, 1 MM HEIGHT, VFBGA-56 | unknown | EAR99 | 8542.32.00.51 | BGA | 56 | |||||||||||||||||||||||
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PF48F3300W0YDQ0
Intel Corporation
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Check for Price | Yes | Obsolete | 268.4355 Mbit | 16 | 4K,32K | 16MX16 | 1.8 V | 65 ns | FLASH | BOTTOM/TOP | YES | YES | NO | 16,510 | 16000000 | 16.7772 M | 8 words | PARALLEL | 30 µA | 50 µA | CMOS | NO | NOR TYPE | R-PBGA-B88 | Not Qualified | 88 | PLASTIC/EPOXY | FBGA | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | INTEL CORP | FBGA, BGA88,8X12,32 | unknown | EAR99 | 8542.32.00.51 |