Parametric results for: 3LP03M under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

4 hits Apply

Drain Current-Max (ID) (2)

250 mA 2 25 A 1

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (1)

1.9 Ω 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

R-PDSO-G3 2

4 hits Apply

e6 1

4 hits Apply

Manufacturer (3)

onsemi 2 SANYO Electric Co Ltd 1 SANYO Semiconductor Co Ltd 1

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 2

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

4 hits Apply

150 mW 2

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply