Parametric results for: 3N157 under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SUBSTRATE 2

4 hits Apply

Configuration (2)

SINGLE 3 Single 1

4 hits Apply

DS Breakdown Voltage-Min (1)

50 V 2

4 hits Apply

Drain Current-Max (Abs) (ID) (1)

30 mA 1

4 hits Apply

Drain Current-Max (ID) (1)

30 mA 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

1.3 pF 2

4 hits Apply

TO-72 2

4 hits Apply

O-MBCY-W4 2

4 hits Apply

e0 2

4 hits Apply

Manufacturer (3)

Freescale Semiconductor 1 Motorola Semiconductor Products 1 Texas Instruments 2

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

4 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 4

4 hits Apply

METAL 2

4 hits Apply

ROUND 2

4 hits Apply

CYLINDRICAL 2

4 hits Apply

Obsolete 4

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

300 mW 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply