Parametric results for: 3SK300 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

LOW NOISE 2

13 hits Apply

SOURCE 9

13 hits Apply

Configuration (1)

SINGLE 13

13 hits Apply

DS Breakdown Voltage-Min (1)

14 V 4

13 hits Apply

Drain Current-Max (ID) (1)

25 mA 13

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

13 hits Apply

0.04 pF 10

13 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 10

13 hits Apply

R-PDSO-G4 13

13 hits Apply

e0 1

13 hits Apply

Manufacturer (2)

Hitachi Ltd 6 Renesas Electronics Corporation 7

13 hits Apply

Number of Elements (1)

1 13

13 hits Apply

Number of Terminals (1)

4 13

13 hits Apply

DUAL GATE, DEPLETION MODE 1 DUAL GATE, ENHANCEMENT MODE 8 ENHANCEMENT MODE 3

13 hits Apply

150.0 °C 2

13 hits Apply

PLASTIC/EPOXY 13

13 hits Apply

RECTANGULAR 13

13 hits Apply

SMALL OUTLINE 13

13 hits Apply

Not Recommended 3 Transferred 10

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 13

13 hits Apply

150 mW 2

13 hits Apply

Power Gain-Min (Gp) (1)

12.0 dB 10

13 hits Apply

Surface Mount (1)

YES 13

13 hits Apply