Parametric results for: 3n214 under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SUBSTRATE 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

20 V 1

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Drain Current-Max (ID) (1)

50 mA 1

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Drain-source On Resistance-Max (1)

20 Ω 1

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METAL-OXIDE SEMICONDUCTOR 1

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2 pF 1

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TO-72 1

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O-MBCY-W4 1

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Manufacturer (1)

Texas Instruments 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

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DEPLETION MODE 1

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200.0 °C 1

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METAL 1

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ROUND 1

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CYLINDRICAL 1

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Obsolete 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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360 mW 1

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Surface Mount (1)

NO 1

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