Parametric results for: 48 13NHG MOSFET under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

44.4 mJ 3

4 hits Apply

DRAIN 3

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 3

4 hits Apply

Drain Current-Max (ID) (1)

40 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

25.9 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSIP-T3 2 R-PSSO-G2 1

4 hits Apply

e3 4

4 hits Apply

Manufacturer (1)

onsemi 4

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (2)

2 1 3 2

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

175.0 °C 2

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

IN-LINE 2 SMALL OUTLINE 1

4 hits Apply

Contact Manufacturer 1 End Of Life 1 Obsolete 2

4 hits Apply

Yes 2

4 hits Apply

260 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

35.3 W 2

4 hits Apply

Surface Mount (2)

NO 2 YES 2

4 hits Apply