Parametric results for: 4AM14 under Power Field-Effect Transistors

All Filters Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Drain Current-Max (ID) (1)

8 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

270 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-PSIP-T12 1

2 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 1

2 hits Apply

Number of Terminals (1)

12 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

IN-LINE 1

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL AND P-CHANNEL 2

2 hits Apply

32 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply