Parametric results for: 4N60 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 112 AVALANCHE RATED, HIGH RELIABILITY 2 AVALANCHE RATED, HIGH VOLTAGE 7 CUSTOM BENT LEAD OPTIONS ARE AVAILABLE 96 FAST SWITCHING 5 HIGH RELIABILITY 48 HIGH VOLTAGE 5 ULTRA LOW RESISTANCE 3

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8.0 mJ 9 14.0 mJ 1 75.0 mJ 3 78.0 mJ 4 80.0 mJ 6 90.0 mJ 1 100.0 mJ 48 117.0 mJ 2 120.0 mJ 13 128.0 mJ 15 130.0 mJ 46 132.0 mJ 10 133.0 mJ 22 136.0 mJ 7 140.0 mJ 4 150.0 mJ 7 160.0 mJ 22 173.0 mJ 2 179.2 mJ 2 180.0 mJ 7 188.0 mJ 1 200.0 mJ 3 210.0 mJ 22 217.0 mJ 2 218.0 mJ 5 220.0 mJ 1 223.8 mJ 3 235.0 mJ 3 240.0 mJ 29 250.0 mJ 1 257.0 mJ 4 260.0 mJ 61 262.0 mJ 7 266.5 mJ 10 290.0 mJ 3 295.0 mJ 3 330.0 mJ 5 358.0 mJ 4 500.0 mJ 5 522.0 mJ 6 550.0 mJ 1 700.0 mJ 3 780.0 mJ 13 809.0 mJ 10 900.0 mJ 15 1300.0 mJ 2 1500.0 mJ 4 1800.0 mJ 9 3000.0 mJ 15 3500.0 mJ 8

Min (mJ) - Max (mJ)

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DRAIN 173 ISOLATED 264

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Configuration (3)

SINGLE 54 Single 1 SINGLE WITH BUILT-IN DIODE 637

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DS Breakdown Voltage-Min (5)

500 V 1 600 V 643 620 V 2 650 V 2 700 V 2

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (1)

4 A 1

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Drain Current-Max (ID) (42)

800 mA 4 1.4 A 3 2 A 4 2.3 A 3 2.4 A 2 2.6 A 4 2.8 A 11 3 A 3 3.2 A 5 3.4 A 2 3.6 A 2 3.8 A 3 3.9 A 5 4 A 457 4.1 A 3 4.2 A 1 4.4 A 7 4.5 A 52 7 A 2 8 A 1 8.5 A 2 11 A 2 13 A 7 14 A 33 15 A 1 16 A 1 17 A 1 18 A 7 21.7 A 5 23.5 A 2 24 A 8 24.3 A 8 36 A 2 37 A 10 38 A 1 40 A 1 41 A 2 42 A 2 44 A 5 50 A 2 64 A 12 94 A 9

Min (A) - Max (A)

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Drain-source On Resistance-Max (41)

35 mΩ 9 95 mΩ 6 96 mΩ 6 100 mΩ 2 104 mΩ 12 105 mΩ 2 130 mΩ 9 140 mΩ 1 160 mΩ 8 165 mΩ 6 175 mΩ 4 185 mΩ 5 190 mΩ 5 200 mΩ 3 240 mΩ 2 250 mΩ 2 255 mΩ 1 266 mΩ 1 309 mΩ 7 450 mΩ 2 490 mΩ 1 540 mΩ 3 550 mΩ 14 600 mΩ 10 630 mΩ 1 950 mΩ 49 1.2 Ω 9 1.4 Ω 4 1.45 Ω 1 2 Ω 10 2.1 Ω 145 2.2 Ω 31 2.3 Ω 3 2.35 Ω 2 2.4 Ω 14 2.5 Ω 197 2.8 Ω 24 3 Ω 4 3.5 Ω 22 4.6 Ω 4 9 Ω 3

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 694

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4 pF 3 4.5 pF 4 5 pF 16 5.3 pF 22 10 pF 15 11 pF 67 13 pF 4 15 pF 14 18 pF 5 20 pF 3 40 pF 34 56 pF 22 66 pF 10 90 pF 3 120 pF 1 330 pF 2

Min (pF) - Max (pF)

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TO-220AB 177 TO-247 7 TO-247AB 4 TO-247AD 9 TO-251 72 TO-251A 1 TO-251AA 11 TO-252 56 TO-252AA 15 TO-254AA 70 TO-261AA 3 TO-262AA 15 TO-263 1 TO-263AA 1 TO-263AB 42 TO-264 1 TO-264AA 12

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R-PDSO-G4 4 R-PDSO-N5 2 R-PDSO-N8 2 R-PSFM-T3 230 R-PSIP-T3 125 R-PSSO-G 1 R-PSSO-G2 127 R-PUFM-X4 4 R-XUUC-N2 1 R-XUUC-N9 1 S-MSFM-P3 96 S-MSFM-T3 48 S-PSSO-N4 2 S-XUUC-N2 1

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e0 53 e1 20 e3 115

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Manufacturer (47)

Advanced Power Electronics Corp 9 Advanced Power Technology 1 Alpha & Omega Semiconductor 7 Bay Linear Inc 2 Diodes Incorporated 3 Fairchild Semiconductor Corporation 41 Fenghua (HK) Electronics Ltd 1 Freescale Semiconductor 1 Fuji Electric Co Ltd 1 Galaxy Microelectronics 4 Galaxy Semi-Conductor Co Ltd 4 HSMC Corporation 3 HY Electronic Corp 4 Infineon Technologies AG 55 Integral Research And Production Corp 1 IXYS Corporation 56 Jiangsu Changjiang Electronics Technology Co Ltd 1 KEC 3 Lite-On Semiconductor Corporation 1 Littelfuse Inc 48 LRC Leshan Radio Co Ltd 9 MagnaChip Semiconductor Ltd 2 MERITEK Electronics Corporation 1 Micro Commercial Components 11 Microchip Technology Inc 1 Microsemi Corporation 3 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New Jersey Semiconductor Products Inc 1 NXP Semiconductors 7 onsemi 20 PanJit Semiconductor 3 Philips Semiconductors 4 Rectron Semiconductor 1 Rochester Electronics LLC 19 Samsung Semiconductor 12 Secos Corporation 6 Siemens 4 Solitron Devices Inc 144 STMicroelectronics 22 Suzhou Good-Ark Electronics Co Ltd 3 Taiwan Semiconductor 10 Tak Cheong Electronics (Holdings) Co Ltd 2 Unisonic Technologies Co Ltd 392 Vishay Intertechnologies 11 WEITRON INTERNATIONAL CO., LTD. 4 Yangzhou Yangjie Electronics Co Ltd 5

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1 54 3 1 NOT APPLICABLE 5 NOT SPECIFIED 10

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Number of Elements (2)

1 692 4 2

Min - Max

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Number of Terminals (6)

2 129 3 499 4 10 5 2 8 2 9 1

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ENHANCEMENT MODE 674

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150.0 °C 613 175.0 °C 1

Min (°C) - Max (°C)

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-55.0 °C 189

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METAL 144 PLASTIC/EPOXY 497 UNSPECIFIED 3

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RECTANGULAR 497 SQUARE 147

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FLANGE MOUNT 378 IN-LINE 125 SMALL OUTLINE 138 UNCASED CHIP 3

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Active 651 Contact Manufacturer 31 End Of Life 3 Not Recommended 16 Obsolete 180 Transferred 64

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No 153 Yes 96

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260 51 NOT APPLICABLE 5 NOT SPECIFIED 473

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Polarity/Channel Type (2)

N-CHANNEL 686 P-CHANNEL 6

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2 W 1 35 W 1 50 W 3 75 W 148

Min (W) - Max (W)

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1.8 W 2 2 W 2 3.13 W 4 28 W 2 30 W 9 31 W 2 33 W 5 34 W 4 35 W 4 36 W 43 37 W 5 38 W 2 39 W 1 44 W 4 48 W 4 49 W 9 50 W 113 51 W 2 59.5 W 1 60 W 4 63 W 1 75 W 51 77 W 2 83 W 2 89 W 1 96 W 3 98 W 2 100 W 16 104 W 4 106 W 59 114 W 5 125 W 3 147 W 6 160 W 6 175 W 5 180 W 2 240 W 4 300 W 13 310 W 2 327 W 3 357 W 10 400 W 5 500 W 1 560 W 4 568 W 2 600 W 1 750 W 12 1.13 kW 4 1.25 kW 4

Min (W) - Max (W)

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Surface Mount (2)

NO 539 YES 152

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