Parametric results for: 4ac125 under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Collector Current-Max (IC) (5)

2 A 3 2.5 A 1 3 A 2 4 A 1 5 A 4

Min (A) - Max (A)

11 hits Apply

Collector-Emitter Voltage-Max (6)

27 V 2 50 V 4 60 V 1 100 V 1 150 V 2 200 V 1

Min (V) - Max (V)

11 hits Apply

Configuration (3)

2 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 6 COMMON EMITTER, 4 ELEMENTS 1 COMPLEX 4

11 hits Apply

DC Current Gain-Min (hFE) (4)

60.0 1 1000.0 5 2000.0 3 7000.0 2

Min - Max

11 hits Apply

R-PSIP-T10 11

11 hits Apply

Manufacturer (3)

Hitachi Ltd 3 Renesas Electronics Corporation 3 ROHM Semiconductor 5

11 hits Apply

Number of Elements (1)

4 11

11 hits Apply

Number of Terminals (1)

10 11

11 hits Apply

150.0 °C 3

11 hits Apply

PLASTIC/EPOXY 11

11 hits Apply

RECTANGULAR 11

11 hits Apply

IN-LINE 11

11 hits Apply

Obsolete 8 Transferred 3

11 hits Apply

NOT SPECIFIED 5

11 hits Apply

Polarity/Channel Type (1)

NPN 11

11 hits Apply

Surface Mount (1)

NO 11

11 hits Apply