Parametric results for: 5n52 under Power Field-Effect Transistors

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Manufacturer Part Number: 5n52
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STD5N52K3
STMicroelectronics
$0.4225 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 525 V 1 4.4 A 1.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 70 W 17.6 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE STMICROELECTRONICS TO-252 DPAK-3 3 not_compliant EAR99 STMicroelectronics
STD5N52U
STMicroelectronics
$0.8077 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 525 V 1 4.4 A 1.5 Ω 170 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 70 W 17.6 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING SINGLE STMICROELECTRONICS TO-252 ROHS COMPLIANT, DPAK-3 3 not_compliant EAR99 STMicroelectronics
STU5N52K3
STMicroelectronics
$51.4088 Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 525 V 1 4.4 A 1.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 70 W 17.6 A SWITCHING SILICON TO-251 R-PSIP-T3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR IN-LINE THROUGH-HOLE SINGLE STMICROELECTRONICS TO-251 IPAK-3 3 not_compliant EAR99 STMicroelectronics
IRF5N5210SCV
Infineon Technologies AG
Check for Price Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 31 A 60 mΩ 340 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 124 A SWITCHING SILICON R-CBCC-N3 NOT SPECIFIED NOT SPECIFIED DRAIN CERAMIC, METAL-SEALED COFIRED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM INFINEON TECHNOLOGIES AG HERMETIC SEALED, SMD-1, 3 PIN compliant EAR99
IRF5N5210SCS
Infineon Technologies AG
Check for Price Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 31 A 60 mΩ 340 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 124 A SWITCHING SILICON R-XBCC-N3 NOT SPECIFIED NOT SPECIFIED DRAIN UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM INFINEON TECHNOLOGIES AG compliant EAR99
IRF5N5210PBF
International Rectifier
Check for Price Yes Yes Transferred P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 31 A 60 mΩ 340 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 124 A SWITCHING SILICON R-CBCC-N3 Not Qualified 150 °C 260 40 DRAIN CERAMIC, METAL-SEALED COFIRED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM INTERNATIONAL RECTIFIER CORP CHIP CARRIER, R-CBCC-N3 3 compliant EAR99
STP5N52K3
STMicroelectronics
Check for Price Yes Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 525 V 1 4.4 A 1.5 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 70 W 17.6 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE STMICROELECTRONICS TO-220AB 3 PIN 3 compliant EAR99 STMicroelectronics
IRF5N5210PBF
Infineon Technologies AG
Check for Price Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 100 V 1 31 A 60 mΩ 340 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 124 A SWITCHING SILICON R-CBCC-N3 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN CERAMIC, METAL-SEALED COFIRED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM INFINEON TECHNOLOGIES AG CHIP CARRIER, R-CBCC-N3 compliant EAR99 Infineon
STB5N52K3
STMicroelectronics
Check for Price Obsolete STMICROELECTRONICS unknown EAR99
STF5N52U
STMicroelectronics
Check for Price Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 525 V 1 4.4 A 1.5 Ω 170 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 25 W 17.6 A SWITCHING SILICON TO-220AB R-PSFM-T3 e3 Not Qualified 150 °C ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE STMICROELECTRONICS TO-220AB 3 PIN 3 not_compliant EAR99