Parametric results for: 8N60 under Other Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

230.0 mJ 8

165 hits Apply

ISOLATED 4

165 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 9

165 hits Apply

DS Breakdown Voltage-Min (1)

600 V 9

165 hits Apply

Drain Current-Max (ID) (1)

7.5 A 9

165 hits Apply

Drain-source On Resistance-Max (1)

1.2 Ω 9

165 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

165 hits Apply

TO-220AB 7 TO-262AA 2

165 hits Apply

R-PSFM-T3 7 R-PSIP-T3 2

165 hits Apply

Manufacturer (7)

Holmes Co Inc 56 Inchange Semiconductor Company Ltd 1 SamHop Microelectronics Corp. 2 Semiconductor Technology Inc 1 Shenzhen SI Semiconductors Co Ltd 2 Unisonic Technologies Co Ltd 101 WEITRON INTERNATIONAL CO., LTD. 2

165 hits Apply

Number of Elements (1)

1 9

165 hits Apply

Number of Terminals (1)

3 9

165 hits Apply

ENHANCEMENT MODE 9

165 hits Apply

150.0 °C 9

165 hits Apply

PLASTIC/EPOXY 9

165 hits Apply

RECTANGULAR 9

165 hits Apply

FLANGE MOUNT 7 IN-LINE 2

165 hits Apply

Active 97 Contact Manufacturer 8 Obsolete 60

165 hits Apply

NOT SPECIFIED 38

165 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

165 hits Apply

48 W 4 147 W 5

Min (W) - Max (W)

165 hits Apply

Surface Mount (1)

NO 9

165 hits Apply