Parametric results for: 8N60G-X-TA3-T under Other Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

230.0 mJ 4 1000.0 mJ 1

Min (mJ) - Max (mJ)

39 hits Apply

ISOLATED 2

39 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

39 hits Apply

DS Breakdown Voltage-Min (1)

600 V 5

39 hits Apply

Drain Current-Max (ID) (2)

7.5 A 4 18 A 1

Min (A) - Max (A)

39 hits Apply

Drain-source On Resistance-Max (2)

400 mΩ 1 1.2 Ω 4

Min (Ω) - Max (Ω)

39 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

39 hits Apply

TO-220AB 3 TO-247 1 TO-262AA 1

39 hits Apply

R-PSFM-T3 4 R-PSIP-T3 1

39 hits Apply

Manufacturer (1)

Unisonic Technologies Co Ltd 39

39 hits Apply

Number of Elements (1)

1 5

39 hits Apply

Number of Terminals (1)

3 5

39 hits Apply

ENHANCEMENT MODE 5

39 hits Apply

150.0 °C 5

39 hits Apply

PLASTIC/EPOXY 5

39 hits Apply

RECTANGULAR 5

39 hits Apply

FLANGE MOUNT 4 IN-LINE 1

39 hits Apply

Active 39

39 hits Apply

NOT SPECIFIED 13

39 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

39 hits Apply

48 W 2 147 W 2 360 W 1

Min (W) - Max (W)

39 hits Apply

Surface Mount (1)

NO 5

39 hits Apply