Parametric results for: AF8958CNL under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

4 hits Apply

Drain Current-Max (ID) (1)

7 A 2

4 hits Apply

Drain-source On Resistance-Max (1)

28 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

R-PDIP-T8 2

4 hits Apply

Manufacturer (3)

Anachip Corporation 1 Diodes Incorporated 1 Integrated Circuit Technology Corp 2

4 hits Apply

Number of Elements (1)

2 2

4 hits Apply

Number of Terminals (1)

8 2

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

IN-LINE 2

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL AND P-CHANNEL 2

4 hits Apply

Surface Mount (1)

NO 2

4 hits Apply