Parametric results for: AFV09P350-04GNR3 under RF Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS 2

2 hits Apply

DS Breakdown Voltage-Min (1)

105 V 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

2 hits Apply

R-PDSO-G4 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

Freescale Semiconductor 1 NXP Semiconductors 1

2 hits Apply

3 2

2 hits Apply

Number of Elements (1)

2 2

2 hits Apply

Number of Terminals (1)

4 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

225.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

260 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Power Gain-Min (Gp) (1)

18.5 dB 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply