Parametric results for: AGR19045E under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 5

6 hits Apply

SOURCE 5

6 hits Apply

Configuration (1)

SINGLE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

65 V 5

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

Highest Frequency Band (1)

L BAND 5

6 hits Apply

R-CDFM-F2 5

6 hits Apply

e0 3

6 hits Apply

Manufacturer (5)

Avago Technologies 2 Broadcom Limited 1 LSI Corporation 1 Qorvo 1 TriQuint Semiconductor 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 5

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

200.0 °C 5

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

FLANGE MOUNT 5

6 hits Apply

Active 3 Obsolete 1 Transferred 2

6 hits Apply

No 1

6 hits Apply

240 2 NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

115 W 4

6 hits Apply

Surface Mount (1)

YES 5

6 hits Apply