Parametric results for: AM82731-050 under RF Power Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

HIGH RELIABILITY 1

2 hits Apply

BASE 1 EMITTER 1

2 hits Apply

Collector Current-Max (IC) (2)

4 A 1 8 A 1

Min (A) - Max (A)

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DC Current Gain-Min (hFE) (1)

30.0 2

2 hits Apply

Highest Frequency Band (1)

S BAND 2

2 hits Apply

R-CDFM-F2 2

2 hits Apply

Manufacturer (2)

Advanced Semiconductor Inc 1 STMicroelectronics 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

250.0 °C 2

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

NPN 2

2 hits Apply

100 W 1 167 W 1

Min (W) - Max (W)

2 hits Apply

Power Gain-Min (Gp) (1)

6.0 dB 1

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply