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APT10035JLL
Microchip Technology Inc
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$57.8582 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 4 | 1 kV | 1 | 25 A | 350 mΩ | 3000 mJ | 160 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 520 W | 100 A | SWITCHING | SILICON | R-PUFM-X4 | e1 | Not Qualified | UL RECOGNIZED | 150 °C | -55 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN SILVER COPPER | UNSPECIFIED | UPPER | MICROCHIP TECHNOLOGY INC | SOT-227, 4 PIN | compliant | EAR99 | |||||||||
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APT10035JLL
Advanced Power Technology
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Check for Price | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 4 | 1 kV | 1 | 25 A | 350 mΩ | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 520 W | 100 A | SWITCHING | SILICON | R-PUFM-X4 | Not Qualified | UL RECOGNIZED | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | UNSPECIFIED | UPPER | ADVANCED POWER TECHNOLOGY INC | ISOTOP-4 | unknown | EAR99 | |||||||||||
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APT10035JLL
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 4 | 1 kV | 1 | 25 A | 350 mΩ | 3000 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 520 W | 100 A | SWITCHING | SILICON | R-PUFM-X4 | e1 | Not Qualified | UL RECOGNIZED | 150 °C | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN SILVER COPPER | UNSPECIFIED | UPPER | MICROSEMI CORP | ISOTOP-4 | unknown | EAR99 | ISOTOP | 4 | ISOTOP | Microsemi Corporation |