Filter Your Search
1 - 4 of 4 results
|
APT30M36B2LLG
Microchip Technology Inc
|
$21.1802 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 300 V | 1 | 84 A | 36 mΩ | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 336 A | SWITCHING | SILICON | R-PSIP-T3 | e1 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Tin/Silver/Copper (Sn/Ag/Cu) | THROUGH-HOLE | SINGLE | MICROCHIP TECHNOLOGY INC | TMAX-3 | compliant | EAR99 | |||||||
|
APT30M36B2LL
Advanced Power Technology
|
Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 300 V | 1 | 84 A | 36 mΩ | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 568 W | 336 A | SWITCHING | SILICON | R-PSIP-T3 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | ADVANCED POWER TECHNOLOGY INC | IN-LINE, R-PSIP-T3 | unknown | EAR99 | ||||||
|
APT30M36B2LL
Microsemi Corporation
|
Check for Price | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 300 V | 1 | 84 A | 36 mΩ | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 568 W | 336 A | SWITCHING | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | MICROSEMI CORP | TMAX-3 | unknown | EAR99 | 3 | ||||
|
APT30M36B2LLG
Microsemi Corporation
|
Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 300 V | 1 | 84 A | 36 mΩ | 2500 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 336 A | SWITCHING | SILICON | R-PSIP-T3 | e1 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN SILVER COPPER | THROUGH-HOLE | SINGLE | MICROSEMI CORP | TMAX-3 | compliant | EAR99 | 3 |