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APT50M50JVFR
Microchip Technology Inc
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$71.5210 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 4 | 500 V | 1 | 77 A | 50 mΩ | FRED FET | 3600 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 308 A | SWITCHING | SILICON | R-PUFM-X4 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | UNSPECIFIED | UPPER | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | |||||||||
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APT50M50JVFR
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 4 | 500 V | 1 | 77 A | 50 mΩ | FREDFET | 3600 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 308 A | SWITCHING | SILICON | R-PUFM-X4 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | UNSPECIFIED | UPPER | MICROSEMI CORP | not_compliant | EAR99 | ISOTOP | ISOTOP-4 | 4 | ISOTOP | Microsemi Corporation | |||
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APT50M50JVFR
Advanced Power Technology
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Check for Price | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 4 | 500 V | 1 | 77 A | 50 mΩ | FRED FET | 3600 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 700 W | 308 A | SWITCHING | SILICON | R-PUFM-X4 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | UNSPECIFIED | UPPER | ADVANCED POWER TECHNOLOGY INC | unknown | EAR99 | ISOTOP-4 |