Parametric results for: APTM120A15F under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 4

4 hits Apply

3000.0 mJ 4

4 hits Apply

ISOLATED 4

4 hits Apply

Configuration (1)

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

1.2 kV 4

4 hits Apply

Drain Current-Max (ID) (1)

60 A 4

4 hits Apply

Drain-source On Resistance-Max (2)

150 mΩ 2 175 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-XUFM-X7 4

4 hits Apply

e0 1 e1 2

4 hits Apply

Manufacturer (3)

Advanced Power Technology 1 Microchip Technology Inc 1 Microsemi Corporation 2

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

2 4

4 hits Apply

Number of Terminals (1)

7 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

UNSPECIFIED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 1 Obsolete 1 Transferred 2

4 hits Apply

No 1 Yes 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

1.25 kW 1

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply