Parametric results for: APTM120DU29T under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 3

3 hits Apply

3000.0 mJ 3

3 hits Apply

ISOLATED 3

3 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR 3

3 hits Apply

DS Breakdown Voltage-Min (1)

1.2 kV 3

3 hits Apply

Drain Current-Max (ID) (1)

34 A 3

3 hits Apply

Drain-source On Resistance-Max (2)

290 mΩ 2 348 mΩ 1

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-XUFM-X12 3

3 hits Apply

e0 1 e1 1

3 hits Apply

Manufacturer (2)

Advanced Power Technology 1 Microsemi Corporation 2

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

2 3

3 hits Apply

Number of Terminals (1)

12 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

UNSPECIFIED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

No 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

780 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply