Parametric results for: ARF466AG under RF Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

1 kV 1

2 hits Apply

Drain Current-Max (ID) (1)

13 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

1 Ω 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

75 pF 1

2 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

2 hits Apply

TO-264AA 1

2 hits Apply

R-PSFM-T3 1

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Microsemi Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 2

2 hits Apply

-55.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

357 W 2

2 hits Apply

Power Gain-Min (Gp) (1)

14.0 dB 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply