Parametric results for: ARF475FL10 under RF Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Configuration (1)

COMMON SOURCE, 2 ELEMENTS 2

3 hits Apply

DS Breakdown Voltage-Min (1)

500 V 2

3 hits Apply

Drain Current-Max (ID) (1)

10 A 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 2

3 hits Apply

R-CDFM-F8 2

3 hits Apply

Manufacturer (3)

Advanced Power Technology 1 Microchip Technology Inc 1 Microsemi Corporation 1

3 hits Apply

Number of Elements (1)

2 2

3 hits Apply

Number of Terminals (1)

8 2

3 hits Apply

DEPLETION MODE 2

3 hits Apply

175.0 °C 2

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

FLANGE MOUNT 2

3 hits Apply

Active 1 Transferred 2

3 hits Apply

No 1

3 hits Apply

NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

Surface Mount (1)

YES 2

3 hits Apply