Parametric results for: ARF477FL10 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

SOURCE 2

4 hits Apply

Configuration (1)

COMMON SOURCE, 2 ELEMENTS 2

4 hits Apply

DS Breakdown Voltage-Min (1)

500 V 2

4 hits Apply

Drain Current-Max (ID) (1)

15 A 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 2

4 hits Apply

R-CDFM-F8 2

4 hits Apply

Manufacturer (2)

Microchip Technology Inc 2 Microsemi Corporation 2

4 hits Apply

Number of Elements (1)

2 2

4 hits Apply

Number of Terminals (1)

8 2

4 hits Apply

DEPLETION MODE 2

4 hits Apply

175.0 °C 2

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

FLANGE MOUNT 2

4 hits Apply

Active 2 Transferred 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

4 hits Apply

Surface Mount (1)

YES 2

4 hits Apply