Parametric results for: ARF520 under RF Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

500 V 2

2 hits Apply

Drain Current-Max (ID) (1)

10 A 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 2

2 hits Apply

O-CRFM-F4 2

2 hits Apply

e0 1

2 hits Apply

Manufacturer (2)

Advanced Power Technology 1 Microsemi Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

4 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

200.0 °C 1

2 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

2 hits Apply

ROUND 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Transferred 2

2 hits Apply

No 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

250 W 1

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply