Parametric results for: AUIRFS3206 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY 5

5 hits Apply

170.0 mJ 5

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

60 V 5

5 hits Apply

Drain Current-Max (ID) (1)

120 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

3 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-263AB 5

5 hits Apply

R-PSSO-G2 5

5 hits Apply

e3 5

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 International Rectifier 3

5 hits Apply

1 5

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

175.0 °C 5

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Not Recommended 1 Obsolete 2 Transferred 2

5 hits Apply

Yes 3

5 hits Apply

NOT SPECIFIED 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

300 W 5

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply