Parametric results for: AUIRFS4115 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA LOW ON RESISTANCE 2

8 hits Apply

230.0 mJ 2

8 hits Apply

DRAIN 2

8 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

8 hits Apply

DS Breakdown Voltage-Min (1)

150 V 2

8 hits Apply

Drain Current-Max (ID) (1)

99 A 2

8 hits Apply

Drain-source On Resistance-Max (1)

12.1 mΩ 2

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

8 hits Apply

105 pF 2

8 hits Apply

TO-236AB 2

8 hits Apply

R-PSSO-G2 2

8 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 International Rectifier 4

8 hits Apply

1 3

8 hits Apply

Number of Elements (1)

1 2

8 hits Apply

Number of Terminals (1)

2 2

8 hits Apply

ENHANCEMENT MODE 2

8 hits Apply

175.0 °C 2

8 hits Apply

-55.0 °C 2

8 hits Apply

PLASTIC/EPOXY 2

8 hits Apply

RECTANGULAR 2

8 hits Apply

SMALL OUTLINE 2

8 hits Apply

Active 1 Obsolete 3 Transferred 4

8 hits Apply

NOT SPECIFIED 3

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

8 hits Apply

375 W 2

8 hits Apply

Surface Mount (1)

YES 2

8 hits Apply