Parametric results for: BB305M under RF Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

12 V 2

3 hits Apply

Drain Current-Max (ID) (1)

25 mA 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

0.04 pF 2

3 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

3 hits Apply

R-PDSO-G4 3

3 hits Apply

e0 1

3 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 2

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

DEPLETION MODE 1 DUAL GATE, DEPLETION MODE 1

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Not Recommended 2 Transferred 1

3 hits Apply

No 1 Yes 1

3 hits Apply

260 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

150 mW 1

3 hits Apply

Power Gain-Min (Gp) (1)

24.0 dB 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply