Parametric results for: BC849CW RF under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

HIGH RELIABILITY 2 LOW NOISE 24

43 hits Apply

Collector Current-Max (IC) (1)

100 mA 35

43 hits Apply

3 pF 10 4.5 pF 2

Min (pF) - Max (pF)

43 hits Apply

Collector-Emitter Voltage-Max (1)

30 V 35

43 hits Apply

Configuration (1)

SINGLE 37

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DC Current Gain-Min (hFE) (2)

110.0 1 420.0 36

Min - Max

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R-PDSO-G3 31

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e0 1 e3 19

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Manufacturer (13)

Continental Device India Ltd 1 Diotec Semiconductor AG 1 Infineon Technologies AG 5 LRC Leshan Radio Co Ltd 2 Nexperia 7 North American Philips Discrete Products Div 1 NXP Semiconductors 8 PanJit Semiconductor 9 Philips Semiconductors 1 Promax-Johnton Electronic Corporation 1 Rochester Electronics LLC 2 Siemens 3 Taiwan Semiconductor 2

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1 13 NOT SPECIFIED 2

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Number of Elements (1)

1 37

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Number of Terminals (1)

3 31

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150.0 °C 22

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-55.0 °C 2

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PLASTIC/EPOXY 31

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RECTANGULAR 31

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SMALL OUTLINE 31

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Active 22 End Of Life 2 Obsolete 8 Transferred 11

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Yes 8

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260 15 NOT SPECIFIED 10

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Polarity/Channel Type (1)

NPN 37

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200 mW 2 250 mW 3

Min (W) - Max (W)

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150 mW 1 200 mW 5 250 mW 2

Min (W) - Max (W)

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Surface Mount (1)

YES 33

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Transition Frequency-Nom (fT) (3)

100 MHz 21 250 MHz 10 300 MHz 2

Min (MHz) - Max (MHz)

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