Parametric results for: BCM856BS/DG under Small Signal Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

100 mA 6

10 hits Apply

Collector-Emitter Voltage-Max (1)

65 V 6

10 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS 6

10 hits Apply

DC Current Gain-Min (hFE) (1)

200.0 6

10 hits Apply

R-PDSO-G6 6

10 hits Apply

e3 1

10 hits Apply

Manufacturer (2)

Nexperia 5 NXP Semiconductors 5

10 hits Apply

Number of Elements (1)

2 6

10 hits Apply

Number of Terminals (1)

6 6

10 hits Apply

150.0 °C 1

10 hits Apply

PLASTIC/EPOXY 6

10 hits Apply

RECTANGULAR 6

10 hits Apply

SMALL OUTLINE 6

10 hits Apply

Active 4 Obsolete 1 Transferred 5

10 hits Apply

NOT SPECIFIED 1

10 hits Apply

Polarity/Channel Type (1)

PNP 6

10 hits Apply

300 mW 1

10 hits Apply

Surface Mount (1)

YES 6

10 hits Apply

Transition Frequency-Nom (fT) (1)

175 MHz 6

10 hits Apply