Parametric results for: BF1100WR under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOW NOISE 1

2 hits Apply

SOURCE 1

2 hits Apply

Configuration (2)

COMPLEX 1 SINGLE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

14 V 1

2 hits Apply

Drain Current-Max (ID) (1)

30 mA 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

0.035 pF 1

2 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

2 hits Apply

R-PDSO-G4 1

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

NXP Semiconductors 1 Philips Semiconductors 1

2 hits Apply

Number of Elements (2)

1 1 2 1

Min - Max

2 hits Apply

Number of Terminals (1)

4 1

2 hits Apply

DUAL GATE, ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

260 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply