Parametric results for: BF1105WR under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount

SOURCE 3

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

7 V 3

5 hits Apply

Drain Current-Max (ID) (1)

30 mA 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

0.04 pF 3

5 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

5 hits Apply

R-PDSO-G4 3

5 hits Apply

e3 5

5 hits Apply

Manufacturer (2)

NXP Semiconductors 4 Philips Semiconductors 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 3

5 hits Apply

DUAL GATE, ENHANCEMENT MODE 3

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

SMALL OUTLINE 3

5 hits Apply

Obsolete 4 Transferred 1

5 hits Apply

Yes 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply