Parametric results for: BF2030 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

LOW NOISE 16

20 hits Apply

SOURCE 16

20 hits Apply

Configuration (1)

SINGLE 20

20 hits Apply

DS Breakdown Voltage-Min (1)

10 V 14

20 hits Apply

Drain Current-Max (ID) (1)

40 mA 20

20 hits Apply

METAL-OXIDE SEMICONDUCTOR 20

20 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 16

20 hits Apply

R-PDSO-G4 16

20 hits Apply

e3 3

20 hits Apply

Manufacturer (3)

Infineon Technologies AG 16 Rochester Electronics LLC 2 Siemens 2

20 hits Apply

1 8

20 hits Apply

Number of Elements (1)

1 20

20 hits Apply

Number of Terminals (1)

4 16

20 hits Apply

DUAL GATE, DEPLETION MODE 16 DUAL GATE, ENHANCEMENT MODE 4

20 hits Apply

150.0 °C 15

20 hits Apply

PLASTIC/EPOXY 16

20 hits Apply

RECTANGULAR 16

20 hits Apply

SMALL OUTLINE 16

20 hits Apply

Active 5 Obsolete 13 Transferred 2

20 hits Apply

Yes 3

20 hits Apply

260 6 NOT SPECIFIED 5

20 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 20

20 hits Apply

200 mW 13

20 hits Apply

Power Gain-Min (Gp) (1)

20.0 dB 14

20 hits Apply

Surface Mount (1)

YES 20

20 hits Apply