Parametric results for: BF256B under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

EUROPEAN PART NUMBER 6

35 hits Apply

Configuration (1)

SINGLE 28

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DS Breakdown Voltage-Min (1)

30 V 26

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Drain Current-Max (ID) (1)

100 mA 24

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JUNCTION 35

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Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 28

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TO-92 24

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O-PBCY-T3 28

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e0 7 e1 1 e3 1

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Manufacturer (11)

Allegro MicroSystems LLC 2 Fairchild Semiconductor Corporation 1 Freescale Semiconductor 1 Infineon Technologies AG 1 Motorola Mobility LLC 12 Motorola Semiconductor Products 12 North American Philips Discrete Products Div 1 NXP Semiconductors 2 onsemi 1 Philips Semiconductors 1 Texas Instruments 1

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Number of Elements (1)

1 28

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Number of Terminals (1)

3 28

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DEPLETION MODE 28

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150.0 °C 12

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PLASTIC/EPOXY 28

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ROUND 28

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CYLINDRICAL 28

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Active 1 Obsolete 31 Transferred 3

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Yes 2

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Polarity/Channel Type (1)

N-CHANNEL 35

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300 mW 8 350 mW 2

Min (W) - Max (W)

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Surface Mount (1)

NO 35

35 hits Apply