Parametric results for: BF511,215 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW NOISE 1

1 hit Apply

Configuration (1)

SINGLE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

20 V 1

1 hit Apply

Drain Current-Max (ID) (1)

30 mA 1

1 hit Apply

JUNCTION 1

1 hit Apply

0.4 pF 1

1 hit Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

1 hit Apply

R-PDSO-G3 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

NXP Semiconductors 1

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1 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

DEPLETION MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Obsolete 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

250 mW 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply